Resistivity of crystalline silicon photovoltaic cell to the electromagnetic field effects

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Résumé

This present paper studies a crystalline silicon PV cell's resistance to electromagnetic field (EMF) effects. This study identifies an optimal doping range for silicon PV cells, enhancing their resistance to EMF damage. After solving key equations, we analyzed the cell's electrical parameters and energy processes. The current slightly drops as the dopant level NB increases from 10^14cm^(-3) to 10^(17)cm^(-3). Meanwhile, the voltage rises sharply. Beyond 10^(17)cm^(-3), the current plummets, while the voltage sees a slight increase. This behavior indicates the best EMF resistance occurs at 10^(17)cm^(-3), aligning with the peak electric power at this doping level. The thermalization mechanism is not affected by the EMF and doping rate. However, the analyses of the thermodynamic process behavior and fill factor on the one hand. Conversely, the absorption mechanism reveals peak resistance to the EMF at 10^(17)cm^(-3). Thus, doping with boron enhances the electromagnetic resistivity of crystalline silicon PV cells. This also improves control over Light-Induced Degradation (LID).

Mots-clés

Crystalline Silicon; PV Cell; Doping Level; Thermodynamic process; Fill Factor, EMF