On the capacitance of crystalline silicon solar cells in steady state

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Résumé

In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calculated. The motivation of this work are two-fold: to show base doping density and illumination effects on the capacitance of silicon solar cells, and to propose a determination technique for both dark capacitance and base doping density from C-V characteristics.

Mots-clés

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